WebSearch results for: IPW65R041CFD MOSFET – Mouser Skip to Main Content (800) 346-6873 Contact Mouser (USA) (800) 346-6873 Feedback Change Location English Español $ USD United States Please confirm your currency selection: Mouser Electronics - Electronic Components Distributor All Filter your search All Capacitors Circuit Protection Computing WebThe IPW65R041CFD is a 650V N-channel CoolMOS™ Power MOSFET with integrated fast body diode and improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this MOSFET a clear advantage. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and …
ipw65r041cfd ԫ price and inventory results: - oemstrade.com
WebApr 27, 2024 · 1pcs IPW65R041CFD brand new FET 65F6041 68.5A650V TO-247. $1.80. $2.00. Free shipping. 2pcs/ IPW65R041CFD 65F6041 TO-247 650V 68.5A. $3.49. Free shipping. 5PCS IPW65R080CFD 65F6080A 65F6080 650V IC. $9.99 + $3.99 shipping. SAVE UP TO 10% See all eligible items and terms. Picture Information. Picture 1 of 5. Click to … WebIPW65R041CFD MOSFET. Datasheet pdf. Equivalent Type Designator: IPW65R041CFD Marking Code: 65F6041 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 500 W Maximum Drain-Source Voltage Vds : 650 V Maximum Gate-Source Voltage Vgs : 20 V Maximum Gate-Threshold Voltage Vgs (th) : … henry clay\u0027s american system purpose
IPW65R041CFD Datasheet(PDF) - Infineon Technologies AG
WebJul 16, 2016 · 360° VIEW. IMAGES. (1PCS) IPW65R041CFD MOSFET N CH 650V 68.5A PG-TO247 65R041 IPW65R041. Visit the SICSTOCK Store. Currently unavailable. We don't know when or if this item will be back in stock. This fits your . Make sure this fitsby entering your model number. Part NO.:IPW65R041CFD. WebIPW65R041CFDFKSA1 Infineon Technologies MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2 datasheet, inventory & pricing. WebTable 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 68 A ISDM (1) Source-drain current (pulsed) - 260 A VSD (2) Forward on voltage VGS = 0 V, ISD = 68 A - 1.6 V trr Reverse recovery time ISD = 68 A, di/dt = 100 A/μs, VDD = 60 V (see Figure 15. Test circuit for inductive load switching and diode … henry clay villa lp